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Silicon carbide (SiC) has high thermo-mechanical properties and high resistance for high temperatures. Therefore, it may be recognized for the improvement of the efficiency of electric energy production. SiC nanoparticles shows high surface area hence it may be applicable in power plants. High temperatures are needed for its synthesis. In the present work, SiC nanopowder is synthesize via sol-gel method. The mixture of SiO2:Mg in the molar ratio 1:2 heated in the furnace at 650°C for 6 hours. For an acid etching of the obtained product for 5 hour a mixture of HF 10% wt and HNO3 4 M were used. Then the mixture is washed with distilled water and dried at room temperature. The final product is SiC. Scanning Electron Microscopy (SEM) was made by field emission JSM-7401F. Morphology, size, high resolution was viewed with Transmission Electron Microscopy (TEM) using a field emission JEOL JEM 2010F, X-Ray Diffraction (DRX) was obtained with a diffractometer Panalytical, Model: Xpert PRO, equipped with Cu Kα1 radiation and Fourier Transform Infrared (FTIR) was made by spectrophotometer Nicolet; Thermal Analysis TGA/DSC SDT Q600 in air atmosphere with a 10°C/min temperature rate. Ultrasonic studies of Silicon Carbide Nanosuspension were carried out by Pulser Receiver Method.
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