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This paper reviews the study of Ultrasonic stress on the semiconductor materials and devices used in various scientific and other measurements. A historical review of earlier findings is also reported with special reference to associated mechanisms. Ultrasonic stress studies in solid state devices require further attention and the work done in this area is also discussed. Different kinds of the mechanism, interpretation responsible for the change in the characteristics of the solid state devices and materials have been discussed. Ultrasonic stress produces a pressure effect on a target object placed in the ultrasonic field. Ultrasonic wave may be regarded as a coherent beam of phonons, absorbed in front of the material. In terms of the charge carriers, an electron hole pair is created due to the Ultrasonic field.
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